2001 volume 33(5)
doi:10.1068/htwu129

Cite as:
Shimazaki K, Tachikawa S, Ohnishi A, Nagasaka Y, 2001, "Temperature dependence of total hemispherical emittance in perovskite-type manganese oxides, La1-xSrxMnO3" High Temperatures - High Pressures 33(5) 525 – 531

Temperature dependence of total hemispherical emittance in perovskite-type manganese oxides, La1-xSrxMnO3

Kazunori Shimazaki, Sumitaka Tachikawa, Akira Ohnishi, Yuji Nagasaka

Received 05 April 2000

Abstract. La1-xSrxMnO3 is a manganese oxide with a perovskite-type structure, LaMnO3, by substitution of La3+ sites with Sr2+, which shows a variety of phenomena with changing hole concentration (x). The total hemispherical emittance, εH, of La1-xSrxMnO3 (x = 0, 0.175, and 0.3) in the vicinity of the metal - insulator transition temperature was measured by the calorimetric method in the temperature range 173 - 373 K. Remarkable differences in εH resulted with changing hole concentration (x). It was observed that εH of La0.825Sr0.175MnO3 changed notably at about 280 K accompanied by the metal - insulator transition and the maximum amount of variation in εH was 0.42. The effects of surface conditions and thicknesses of samples were also observed. The uncertainty in the measurement of εH was estimated to be at most ±2.2% from 173.15 to 373.15 K.

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